Inkjet printed high-mobility indium zinc tin oxide thin film transistors

被引：132

作者：

Lee, Doo-Hyoung ^{[1
,2
]}

Han, Seung-Yeol ^{[1
]}

Herman, Gregory S. ^{[3
]}

Chang, Chih-Hung ^{[1
]}

机构：

[1] Oregon State Univ, Dept Chem Engn, Corvallis, OR 97330 USA

[2] Yeungnam Univ, Sch Display & Chem Engn, Kyongsan 2141, South Korea

[3] Hewlett Packard Corp, Corvallis, OR 97330 USA

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2009年 / 19卷 / 20期

基金：

美国国家科学基金会;

关键词：

SEMICONDUCTORS; CIRCUITS;

D O I：

10.1039/b822893k

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin-film transistors based on inkjet printed indium zinc tin oxide (IZTO) channel layers are reported in this paper. The printed IZTO transistor has a high field-effect mobility (mu(FE) = similar to 30 cm(2) V-1 s(-1)), excellent on-to-off current ratio (> 1 x 10(6)) and behaves as an enhancement mode device (turn-on voltage 2 V). This mobility is an order magnitude higher than previously reported for inkjet printed oxide-based transistors. The printed films are highly transparent in the UV-Visible regime with a transmittance higher than 95%. A transparent thin film transistor using a printed IZTO channel was also demonstrated for the first time.

引用

下载

页码：3135 / 3137

页数：3

共 50 条

[21] Improvement in Photo-Bias Stability of High-Mobility Indium Zinc Oxide Thin-Film Transistors by Oxygen High-Pressure Annealing
Park, Se Yeob
Song, Ji Hun
Lee, Chang-Kyu
Son, Byeong Geun
Lee, Chul-Kyu
Kim, Hyo Jin
Choi, Rino
Choi, Yu Jin
Kim, Un Ki
Hwang, Cheol Seong
Kim, Hyeong Joon
Jeong, Jae Kyeong
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (07) : 894 - 896
[22] Boosting carrier mobility and stability in indium–zinc–tin oxide thin-film transistors through controlled crystallization
Nuri On
Bo Kyoung Kim
Yerin Kim
Eun Hyun Kim
Jun Hyung Lim
Hideo Hosono
Junghwan Kim
Hoichang Yang
Jae Kyeong Jeong
Scientific Reports, 10
[23] Printed silver ohmic contacts for high-mobility organic thin-film transistors
Wu, YL
Li, YN
Ong, BS
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2006, 128 (13) : 4202 - 4203
[24] Yttrium zinc tin oxide high voltage thin film transistors
Marette, Alexis
Shea, Herbert R.
Briand, Danick
APPLIED PHYSICS LETTERS, 2018, 113 (13)
[25] Printed silver ohmic contacts for high-mobility organic thin-film transistors
Wu, Yiliang
Li, Yuning
Ong, Beng S.
Journal of the American Chemical Society, 2006, 128 (13): : 4202 - 4203
[26] High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
Chiang, HQ
Wager, JF
Hoffman, RL
Jeong, J
Keszler, DA
APPLIED PHYSICS LETTERS, 2005, 86 (01) : 013503 - 1
[27] Effects of Active Layer Thickness on the Electrical Characteristics and Stability of High-Mobility Amorphous Indium-Gallium-Tin Oxide Thin-Film Transistors
Kim, Dae-Hwan
Cha, Hyun-Seok
Jeong, Hwan-Seok
Hwang, Seong-Hyun
Kwon, Hyuck-In
ELECTRONICS, 2021, 10 (11)
[28] High-Mobility and Good-Stability Thin-Film Transistors With Scandium-Substituted Indium Oxide Semiconductors
Song, Wei
Lan, Linfeng
Xiao, Peng
Lin, Zhenguo
Sun, Sheng
Li, Yuzhi
Song, Erlong
Gao, Peixiong
Zhang, Peng
Wu, Weijing
Peng, Junbiao
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (11) : 4315 - 4319
[29] The preparation and characteristics research of high mobility amorphous indium gallium zinc oxide thin-film transistors
Li Shuai-Shuai
Liang Chao-Xu
Wang Xue-Xia
Li Yan-Hui
Song Shu-Mei
Xin Yan-Qing
Yang Tian-Lin
ACTA PHYSICA SINICA, 2013, 62 (07)
[30] High Mobility Indium Zinc Oxide Thin Film Field-Effect Transistors by Semiconductor Layer Engineering
Walker, Daniel E.
Major, Marton
Baghaie Yazdi, Mehrdad
Klyszcz, Andreas
Haeming, Marc
Bonrad, Klaus
Melzer, Christian
Donner, Wolfgang
von Seggern, Heinz
ACS APPLIED MATERIALS & INTERFACES, 2012, 4 (12) : 6834 - 6840

← 1 2 3 4 5 →