Inkjet printed high-mobility indium zinc tin oxide thin film transistors

被引：132
|
作者：
Lee, Doo-Hyoung [1 ,2 ]
Han, Seung-Yeol [1 ]
Herman, Gregory S. [3 ]
Chang, Chih-Hung [1 ]
机构：
[1] Oregon State Univ, Dept Chem Engn, Corvallis, OR 97330 USA
[2] Yeungnam Univ, Sch Display & Chem Engn, Kyongsan 2141, South Korea
[3] Hewlett Packard Corp, Corvallis, OR 97330 USA
来源：
JOURNAL OF MATERIALS CHEMISTRY | 2009年 / 19卷 / 20期
基金：
美国国家科学基金会;
关键词：
SEMICONDUCTORS; CIRCUITS;
D O I：
10.1039/b822893k
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Thin-film transistors based on inkjet printed indium zinc tin oxide (IZTO) channel layers are reported in this paper. The printed IZTO transistor has a high field-effect mobility (mu(FE) = similar to 30 cm(2) V-1 s(-1)), excellent on-to-off current ratio (> 1 x 10(6)) and behaves as an enhancement mode device (turn-on voltage 2 V). This mobility is an order magnitude higher than previously reported for inkjet printed oxide-based transistors. The printed films are highly transparent in the UV-Visible regime with a transmittance higher than 95%. A transparent thin film transistor using a printed IZTO channel was also demonstrated for the first time.
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页码：3135 / 3137
页数：3
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