Passivation of extended defects in silicon by catalytically dissociated molecular hydrogen

被引：1

作者：

Binetti, S ^{[1
]}

Basu, S ^{[1
]}

Acciarri, M ^{[1
]}

Pizzini, S ^{[1
]}

机构：

[1] CONSORZIO MILANO RIC,I-20133 MILAN,ITALY

来源：

JOURNAL DE PHYSIQUE III | 1997年 / 7卷 / 07期

关键词：

D O I：

10.1051/jp3:1997201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports the results of a new hydrogenation process, which applies the properties of noble metals as chemisorptive dissociation catalysts for molecular hydrogen. Used to passivate deep states in several kinds of polycrystalline materials, H has been shown to be particularly effective for samples grown by the EFG (Edge Film Grown) technique. These results are compared with former ones obtained on dislocated single crystals, which were passivated under an hydrogen plasma, to speculate about the role of dislocations on the yield of a hydrogen passivation process.

引用

页码：1487 / 1493

页数：7

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