Optical and magnetic properties of Mn doped ZnO thin films grown by SILAR method

被引：15
|
作者：
Balamurali, S. [1 ,2 ]
Chandramohan, R. [2 ]
Suriyamurthy, N. [3 ]
Parameswaran, P. [4 ]
Karunakaran, M. [5 ]
Dhanasekaran, V. [6 ]
Mahalingam, T. [7 ]
机构：
[1] Manonmaniam Sundarnar Univ, Tirunelveli 627012, India
[2] Sree Sevugan Annamalai Coll, Dept Phys, Devakottai 630303, India
[3] IGCAR, Radiol Safety Div Ctr, Kalpakam 603102, India
[4] IGCAR, Mat Sci Grp, Kalpakam 603102, India
[5] Sethupathy Govt Arts Coll, Dept Phys, Ramanathapuram 623502, India
[6] Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India
[7] Karunya Univ, Sch Sci & Humanities, Dept Phys, Coimbatore 641116, Tamil Nadu, India
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2013年 / 24卷 / 06期
关键词：
ELECTRICAL-PROPERTIES; TEMPERATURE;
D O I：
10.1007/s10854-012-1012-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Polycrystalline Mn doped ZnO (MZO) semiconductor thin films were deposited onto glass substrates employing different number of dipping at room temperature using Successive Ionic Layers by Adsorption Reaction (SILAR) technique. The thin film deposition conditions were optimized by altering the various deposition parameters based on their structure. The structural study was carried out using X-ray diffractometer (XRD). The XRD analysis indicated that there is no change in the structure of ZnO thin films due to Mn doping. The films exhibited hexagonal wurtzite structure. The structural studies on Mn doped samples revealed that the predominant orientation is (002) lattice plane and the position of this orientation shifted toward lower angle during doping. The intensity of photoluminescence (PL) emission of ZnO is found to be augmented for Mn doped samples. The room temperature Raman spectra measurements revealed the presence of additional modes. The Vibrating Sample Magnetometer (VSM) studies show that MZO thin film has ferromagnetic properties.
引用
收藏
页码：1782 / 1787
页数：6
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