Source/drain series-resistance effects in amorphous gallium-indium zinc-oxide thin film transistors

被引：86

作者：

Park, Jaechul ^{[1
]}

Kim, Changjung ^{[1
]}

Kim, Sunil ^{[1
]}

Song, Hun ^{[1
]}

Kim, Sangwook

Kang, Donghun ^{[1
]}

Lim, Hyuck ^{[1
]}

Yin, Huaxiang ^{[1
]}

Jung, Ranju ^{[1
]}

Lee, Eunha ^{[2
]}

Lee, Jaecheol ^{[2
]}

Kwon, Kee-Won ^{[3
]}

Park, Youngsoo ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Semicond Device & Mat Lab, Yongin 449711, Gyeonggi Do, South Korea

[2] Samsung Adv Inst Technol, Analyt Engn Ctr, Yongin 449711, Gyeonggi Do, South Korea

[3] Sungkyunkwan Univ, Semicond Syst Engn, Suwon 440746, Gyeonggi Do, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 08期

关键词：

amorphous gallium-indium zinc-oxide thin film transistor (a-GIZO TFT); analog circuits; a-Si : H TFT; intersection point; MOSFET circuits; overlap distance; series resistance;

D O I：

10.1109/LED.2008.2000815

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we investigated the effects of source/drain series resistance on amorphous gallium-indium-doped zinc-oxide (a-GIZO) thin film transistors (TFTs). A linear least square fit of a plot of the reciprocal of channel resistance versus gate voltage yields a threshold voltage of 3.5 V and a field-effect mobility of about 13.5 cm(2)/V . s. Furthermore, in a-GIZO TFTs, most of the current flows in the distance range of 0-0.5 mu m from the channel edge and shorter than that in a-Si:H TFTs. Moreover, unlike a-Si:H TFTs, a-GIZO TFTs did not show an intersection point, because they did not contain a highly doped ohmic (n+) layer below the source/drain electrodes.

引用

页码：879 / 881

页数：3

共 50 条

[21] Electrode metal penetration of amorphous indium gallium zinc oxide semiconductor thin film transistors
Ka, Jihyun
Cho, Edward Namkyu
Lee, Min-Jung
Myoung, Jae-Min
Yun, Ilgu
CURRENT APPLIED PHYSICS, 2015, 15 (06) : 675 - 678
[22] TCAD Simulation of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors
Martins, Jorge
Barquinha, Pedro
Goes, Joao
TECHNOLOGICAL INNOVATION FOR CYBER-PHYSICAL SYSTEMS, 2016, 470 : 551 - 557
[23] Device characteristics of amorphous indium gallium zinc oxide thin film transistors with ammonia incorporation
Huang, Sheng-Yao
Chang, Ting-Chang
Chen, Min-Chen
Tsao, Shu-Wei
Chen, Shih-Ching
Tsai, Chih-Tsung
Lo, Hung-Ping
SOLID-STATE ELECTRONICS, 2011, 61 (01) : 96 - 99
[24] High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
Jeong, Jae Kyeong
Jeong, Jong Han
Yang, Hui Won
Park, Jin-Seong
Mo, Yeon-Gon
Kim, Hye Dong
APPLIED PHYSICS LETTERS, 2007, 91 (11)
[25] Indium Doping Concentration Effects in the Fabrication of Zinc-Oxide Thin-Film Transistors
You, Hsin-Chiang
INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE, 2013, 8 (07): : 9773 - 9784
[26] Empirical Modeling and Extraction of Parasitic Resistance in Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors
Park, Jun-Hyun
Jung, Hyun-Kwang
Kim, Sungchul
Lee, Sangwon
Kim, Dong Myong
Kim, Dae Hwan
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (08) : 2796 - 2799
[27] Analytical drain current model for symmetric dual-gate amorphous indium gallium zinc oxide thin-film transistors
Qin, Ting
Liao, Congwei
Huang, Shengxiang
Yu, Tianbao
Deng, Lianwen
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (01)
[28] Effect of magnesium oxide passivation on the performance of amorphous indium-gallium-zinc-oxide thin film transistors
Yoo, Dong Youn
Chong, Eugene
Kim, Do Hyung
Ju, Byeong Kwon
Lee, Sang Yeol
THIN SOLID FILMS, 2012, 520 (10) : 3783 - 3786
[29] Effects of argon flow rate on electrical properties of amorphous indium gallium zinc oxide thin-film transistors
Sahoo, A. K.
Wu, G. M.
THIN SOLID FILMS, 2016, 605 : 129 - 135
[30] Light effects of the amorphous indium gallium zinc oxide thin-film transistor
Lee, Keun Woo
Shin, Hyun Soo
Heo, Kon Yi
Kim, Kyung Min
Kim, Hyun Jae
JOURNAL OF INFORMATION DISPLAY, 2009, 10 (04) : 171 - 174

← 1 2 3 4 5 →