Effects of arsenic concentration profile in gate oxide on electric properties of metal-oxide-silicon devices

被引：0

作者：

Chang-Liao, KS ^{[1
]}

Chuang, CS ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 25期

关键词：

D O I：

10.1063/1.1427132

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of arsenic concentration profiles in gate oxides on the electrical properties of metal-oxide-silicon (MOS) capacitors were investigated. It is found that arsenic in the bulk of gate oxide degrades the electric property of MOS devices, which could be due to the electron traps introduced by arsenic. Interestingly, the electric properties of MOS devices can be improved by an increase in the arsenic concentration at the SiO2/Si interface. This improvement may be attributed to the interfacial strain relaxation and/or the replacement of nonbridging bonds. The arsenic concentration profile in gate oxide plays a crucial role for the electric properties of MOS devices. (C) 2001 American Institute of Physics.

引用

页码：4171 / 4173

页数：3

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