53 nm sampled grating tunable lasers from an InP generic foundry platform

被引：9
|
作者：
Lee, Moon-Hyeok [1 ]
Soares, Francisco [1 ]
Baier, Moritz [1 ]
Moehrle, Martin [1 ]
Rehbein, Wolfgang [1 ]
Schell, Martin [1 ]
机构：
[1] Fraunhofer Heinrich Hertz Inst, Einsteinufer 37, D-10587 Berlin, Germany
来源：
SEMICONDUCTOR LASERS AND LASER DYNAMICS IX | 2020年 / 11356卷
关键词：
tunable laser; sampled grating; distributed Bragg grating; indium phosphide; generic foundry platform;
D O I：
10.1117/12.2554541
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we report the integration of sampled grating distributed Bragg reflector (SG-DBR) lasers using an InP-based generic integration platform for the first time. These lasers show 53 nm tuning range in C band from 1533 nm to 1586 nm with 40 dB side mode suppression (SMSR). Threshold current of the laser is 20 mA, and the front facet output power is 8 mW at 100 mA gain current. The Lorentzian optical linewidth amounts to 713 kHz. We fabricated this laser using the standard Multi-Project Wafer processes of the Fraunhofer HHI InP integration platform.
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页数：6
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