Nondestructive characterization of GaAs-based multilayer epitaxial structures

被引：0
|
作者：
Smith, PB [1 ]
Allerman, AA [1 ]
Duncan, WM [1 ]
机构：
[1] TEXAS INSTRUMENTS INC,DEF SYST & ELECTR GRP,CORP RES & DEV,DALLAS,TX 75265
来源：
SEMICONDUCTOR CHARACTERIZATION: PRESENT STATUS AND FUTURE NEEDS | 1996年
关键词：
D O I：
暂无
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
引用
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页码：678 / 682
页数：5
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