Mask Effects on Resist Variability in Extreme Ultraviolet Lithography

被引：2

作者：

Pret, Alessandro Vaglio ^{[1
]}

Gronheid, Roel ^{[1
]}

Engelen, Jan ^{[2
]}

Yan, Pei-Yang ^{[3
]}

Leeson, Michael J. ^{[4
]}

Younkin, Todd R. ^{[1
,4
]}

Garidis, Konstantinos ^{[5
]}

Biafore, John ^{[6
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven KU Leuven, Dept Elect Engn, B-3000 Louvain, Belgium

[3] Intel Corp, Santa Clara, CA 95054 USA

[4] Intel Corp, Hillsboro, OR 97124 USA

[5] KTH, S-10044 Stockholm, Sweden

[6] KLA Tencor Finle Div, Austin, TX 78759 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 06期

关键词：

LINE-EDGE ROUGHNESS; METRICS; IMPACT; UV;

D O I：

10.7567/JJAP.52.06GC02

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Resist variability is one of the challenges that must to be solved in extreme UV lithography. One of the root causes of the resist roughness are the mask contributions. Three different effects may plays a non-negligible role: mask pattern roughness transfer-or mask line edge roughness, speckle effects caused by mask surface roughness, and mask layout which causes local flare amplification at wafer level. In this paper, mask contributions to the pattern variability are individually assessed experimentally and via stochastic simulations for both lines/spaces and contact holes. It was found that the predominant effect is the mask layout, while the speckle contribution is barely detectable. (c) 2013 The Japan Society of Applied Physics

引用

页数：5

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