Photo-enhanced field emission properties of p-doped black Si arrays

被引：0
|
作者：
Mingels, S. [1 ]
Porshyn, V. [1 ]
Serbun, P. [1 ]
Luetzenkirchen-Hecht, D. [1 ]
Mueller, G. [1 ]
Prommesberger, C. [2 ]
Langer, C. [2 ]
Schreiner, R. [2 ]
机构：
[1] Univ Wuppertal, Dept Phys, Fac 4, D-42119 Wuppertal, Germany
[2] OTH Regensburg, Fac Gen Sci & Microsyst Technol, D-93053 Regensburg, Germany
来源：
2016 29TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC) | 2016年
关键词：
photo-enhanced field emission; black Si;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have carried out systematic investigations of p-type black Si field emitter arrays under laser illumination. As expected the current-voltage characteristic revealed a strong saturation providing a high photosensitivity, which had a maximum on-off ratio of 43 at a maximum current of 13 mu A. The saturation current was stable in the dark as well as under illumination with fluctuations <0.7%. Results from time-resolved measurements of the photo-sensitivity showed a rather fast response but a long decay time. Electron spectra in the dark and under laser illumination revealed the origin of the emission.
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页数：2
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