Reliability of AlN substrates and their solder joints in IGBT power modules

被引：24
|
作者：
Mitic, G [1 ]
Beinert, R
Klofac, P
Schultz, HJ
Lefranc, G
机构：
[1] Siemens AG, Corp Technol, D-81730 Munich, Germany
[2] Eupec GMBH U Co KG, D-59568 Warstein, Germany
来源：
MICROELECTRONICS RELIABILITY | 1999年 / 39卷 / 6-7期
关键词：
D O I：
10.1016/S0026-2714(99)00165-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The reliability of IGBT modules was investigated with respect to the metallized ceramic (substrate) and the solder layer between the substrate and copper baseplate. Thermal cycles were performed between -55 degrees C and +150 degrees C on substrates based on different technologies and from various manufacturers. An incipient delamination of the metallization could be predicted from the mechanical resonance frequency. The warping of the substrates after cycling due to crack propagation and the adhesion of the metallization were determined. Thermal and active-power cycles were performed on 1200 A / 3.3 kV IGBT power modules to investigate the reliability of the solder joint between substrate and baseplate. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1159 / 1164
页数：6
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