Nanodielectrics approaches to low-voltage organic transistors and circuits

被引:4
|
作者
Lee, Seunghyuk [1 ]
Han, Heesung [1 ]
Kim, Chang-Hyun [1 ]
机构
[1] Gachon Univ, Dept Elect Engn, Seongnam 13120, South Korea
来源
基金
新加坡国家研究基金会;
关键词
FIELD-EFFECT TRANSISTORS; SELF-ASSEMBLED MONOLAYERS; SOL-GEL; LOW-TEMPERATURE; GATE DIELECTRICS; POLYMER; SEMICONDUCTORS; MULTILAYERS; FABRICATION; MOBILITY;
D O I
10.1051/epjap/2020200120
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this review, advances in nanoscale dielectric materials for organic field-effect transistors (OFETs) are summarized. OFETs are highly promising device units for ultra-thin, light-weight, flexible, and wearable electronics systems, while the operating voltages of the reported devices are in many cases much higher than what is relevant to modern technological applications. Key aspects behind this issue are clarified in terms of basic transistor device physics, which translate into the important motivations for realizing nanodielectric-based low-voltage OFETs. Different possibilities of a device design are explained in detail by introducing important recent publications on each material class. Finally, several forward-looking remarks on the integration of nanodielectrics into next-generation OFETs are provided.
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页数:8
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