Low-Voltage Organic Transistors for Flexible Electronics

被引：0
|
作者：
Zschieschang, Ute [1 ]
Roedel, Reinhold [1 ]
Kraft, Ulrike [1 ]
Takimiya, Kazuo [2 ]
Zaki, Tarek [3 ]
Letzkus, Florian [4 ]
Butschke, Joerg [4 ]
Richter, Harald [4 ]
Burghartz, Joachim N. [4 ]
Xiong, Wei [5 ]
Murmann, Boris [5 ]
Klauk, Hagen [1 ]
机构：
[1] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany
[2] RIKEN Adv Sci Inst, Emergent Mol Funct Res Team, Wako, Saitama, Japan
[3] Univ Stuttgart, Inst Nano & Microelect Syst INES, Stuttgart, Germany
[4] Inst Mikroelekt IMS CHIPS, Stuttgart, Germany
[5] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA
来源：
2014 DESIGN, AUTOMATION AND TEST IN EUROPE CONFERENCE AND EXHIBITION (DATE) | 2014年
关键词：
THIN-FILM TRANSISTORS; MEGAHERTZ OPERATION; MOBILITY; DISPLAY;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
A process for the fabrication of bottom-gate, top-contact (inverted staggered) organic thin-film transistors (TFTs) with channel lengths as short as 1 mu m on flexible plastic substrates has been developed. The TFTs employ vacuum-deposited small-molecule semiconductors and a lowtemperature- processed gate dielectric that is sufficiently thin to allow the TFTs to operate with voltages of about 3 V. The p-channel TFTs have an effective field-effect mobility of about 1 cm(2)/Vs, an on/off ratio of 10(7), and a signal propagation delay (measured in 11-stage ring oscillators) of 300 ns per stage. For the n-channel TFTs, an effective field-effect mobility of about 0.06 cm(2)/Vs, an on/off ratio of 10(6), and a signal propagation delay of 17 mu s per stage have been obtained.
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页数：6
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