Atomically flat diamond (111) surface formation by homoepitaxial lateral growth

被引：35
|
作者：
Tokuda, Norio [1 ]
Umezawa, Hitoshi [3 ]
Ri, Sung-Gi [1 ,2 ]
Ogura, Masahiko [1 ]
Yamabe, Kikuo [4 ,5 ]
Okushi, Hideyo [1 ]
Yamasaki, Satoshi [1 ,4 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058568, Japan
[2] Japan Sci & Technol Corp, CREST, Tsukuba, Ibaraki, Japan
[3] AIST, Diamond Res Ctr, Tsukuba, Ibaraki 3058568, Japan
[4] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[5] Univ Tsukuba, Tsukuba Res Ctr Interdisciplinary Mat Sci, Tsukuba, Ibaraki 3058571, Japan
来源：
DIAMOND AND RELATED MATERIALS | 2008年 / 17卷 / 7-10期
关键词：
diamond; lateral growth; homoepitaxy; atomically flat surface; CVD;
D O I：
10.1016/j.diamond.2008.01.089
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A process of homoepitaxial growth of diamond (111) films by microwave plasma-enhanced chemical vapor deposition has been investigated characterizing areas by ex-situ atomic force microscopy. The evolution of surface morphology during a lateral growth of (111) diamond was visualized utilizing a mesa structure as a marker. Lateral growth forms atomically flat surfaces, which show atomically flat terraces over several hundred nm widths and single bilayer steps of (111) diamond. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：1051 / 1054
页数：4
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