Formation of graphene-on-diamond structure by graphitization of atomically flat diamond (111) surface

被引：0
|
作者：
Tokuda, Norio [1 ,2 ,3 ]
Fukui, Makoto [1 ]
Makino, Toshiharu [2 ,3 ]
Takeuchi, Daisuke [2 ,3 ]
Yamsaki, Satoshi [2 ,3 ]
Inokuma, Takao [1 ]
机构：
[1] Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa 920-1192, Japan
[2] Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
[3] Japan Science and Technology Corporation (JST), Core Research for Evolutional Science and Technology (CREST), C/o AIST, Tsukuba, Ibaraki 305-8568, Japan
来源：
Japanese Journal of Applied Physics | 2013年 / 52卷 / 11 PART 1期
关键词：
Diamond structures - Graphene layers - Homoepitaxial - Lateral growth;
D O I：
110121
中图分类号：
学科分类号：
摘要：
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