Resistance formation mechanisms for contacts to n-GaN and n-AlN with high dislocation density

被引：4

作者：

Sachenko, A. V. ^{[1
]}

Belyaev, A. E. ^{[1
]}

Boltovets, N. S. ^{[2
]}

Zhilyaev, Yu V. ^{[3
]}

Klad'ko, V. P. ^{[1
]}

Konakova, R. V. ^{[1
]}

Kudryk, Ya Ya ^{[1
]}

Panteleev, V. N. ^{[3
]}

Sheremet, V. N. ^{[1
]}

机构：

[1] NAS Ukraine, V Lashkaryov Inst Semicond Phys, Kiev, Ukraine

[2] State Enterprise Res Inst Onion, Kiev, Ukraine

[3] RAS, Ioffe Phys Tech Inst, St Petersburg, Russia

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3 | 2013年 / 10卷 / 03期

关键词：

ohmic contact; resistivity; OHMIC CONTACTS;

D O I：

10.1002/pssc.201200530

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied Au-Pd-Ti-Pd ohmic contacts made by thermal evaporation of metals in vacuum onto n-GaN (n-AlN) with high dislocation density heated to a temperature of 350 degrees C. Temperature dependence of ohmic contacts resistivity may be described by the mechanism of current flow through the metal shunts associated with dislocations, with allowance made for current limitation by diffusion supply of electrons to the contact. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：498 / 500

页数：3

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