Cu(In,Ga)Se2 thin film solar cell with Zn(S,O) buffer layer fabricated by a chemical bath deposition method

被引：0
|
作者：
Lin, Xinlu [1 ,2 ]
Li, Hui [1 ,2 ]
Qu, Fei [1 ]
Gu, Hongwei [1 ,2 ]
Wang, Wenjing [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Elect Engn, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年
基金：
中国国家自然科学基金;
关键词：
Solar energy; Photovoltaic cells; Thin films; Zinc compounds; Chemical processes;
D O I：
暂无
中图分类号：
X [环境科学、安全科学];
学科分类号：
08 ; 0830 ;
摘要：
Cu(In1-xGax)Se-2 (CIGS) solar cells have been attracting much attention both in the academic and industrial fields due to their high efficiency, low cost and stability. The structure of CIGS solar cells is "glass substrate/Mo/CIGS/Zn(S, O)/Zn1-xMgxO/AZO/metal grids". The Zn(S, O) buffer layer was fabricated by a chemical bath deposition (CBD) method. The highest efficiency was 11.65%.
引用
收藏
页码：3006 / 3008
页数：3
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