Thermally activated non-linearity of device in resistance-switching memory for cross-point array applications

被引：14

作者：

Woo, Jiyong ^{[1
]}

Kim, Seonghyun ^{[2
]}

Lee, Wootae ^{[2
]}

Lee, Daeseok ^{[1
]}

Park, Sangsu ^{[3
]}

Choi, Godeuni ^{[1
]}

Cha, Euijun ^{[1
]}

Hwang, Hyunsang ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

[2] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea

[3] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 12期

基金：

新加坡国家研究基金会;

关键词：

HIGH-DENSITY; OXIDE;

D O I：

10.1063/1.4799148

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a TiOx-based resistance-switching device that exhibits non-linearity in the low resistance state (LRS) under high operating current conditions for cross-point array applications. The transition of the conduction behavior in the LRS from linear to non-linear type was observed in the TiOx/TiOy bilayered structure by controlling programming currents. Our results suggest that the non-linear conduction behavior is activated in a thermally formed suboxide region due to lots of heat during the switching. By using achieved non-linearity of device, a one-resistor memory cell can be used for the suppression of sneak-path currents without the need for additional selector device. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799148]

引用

页数：4

共 29 条

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