Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array

被引：5

作者：

Chen, Zhe ^{[1
]}

Li, Haitong ^{[1
]}

Chen, Hong-Yu

Chen, Bing ^{[1
]}

Liu, Rui ^{[1
]}

Huang, Peng ^{[1
]}

Zhang, Feifei ^{[1
]}

Jiang, Zizhen ^{[2
,3
]}

Ye, Hongfei ^{[1
]}

Gao, Bin ^{[1
]}

Liu, Lifeng ^{[1
]}

Liu, Xiaoyan ^{[1
]}

Kang, Jinfeng ^{[1
]}

Wong, H-S Philip ^{[2
,3
]}

Yu, Shimeng ^{[4
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[3] Stanford Univ, Stanford SystemX Alliance, Stanford, CA 94305 USA

[4] Arizona State Univ, Sch Comp Informat & Decis Syst Engn, Tempe, AZ 85281 USA

来源：

NANOTECHNOLOGY | 2016年 / 27卷 / 21期

基金：

美国国家科学基金会;

关键词：

resistance disturbance; resistive random access memory (RRAM); half-selected (HS) cells; cross-point array; SPICE simulation; RRAM; DEVICE; MODEL;

D O I：

10.1088/0957-4484/27/21/215204

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Disturbance characteristics of cross-point resistive random access memory (RRAM) arrays are comprehensively studied in this paper. An analytical model is developed to quantify the number of pulses (#Pulse) the cell can bear before disturbance occurs under various sub-switching voltage stresses based on physical understanding. An evaluation methodology is proposed to assess the disturb behavior of half-selected (HS) cells in cross-point RRAM arrays by combining the analytical model and SPICE simulation. The characteristics of cross-point RRAM arrays such as energy consumption, reliable operating cycles and total error bits are evaluated by the methodology. A possible solution to mitigate disturbance is proposed.

引用

页数：8

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