Integrated IGBT short-circuit protection structure: Design and optimization

被引：4

作者：

Caramel, C ^{[1
]}

Austin, P ^{[1
]}

Sanchez, JL ^{[1
]}

Imbernon, E ^{[1
]}

Breil, M ^{[1
]}

机构：

[1] CNRS, LAAS, F-31077 Toulouse, France

来源：

MICROELECTRONICS JOURNAL | 2006年 / 37卷 / 03期

关键词：

short-circuit protection; anode voltage sensor; IGBT; functional integration;

D O I：

10.1016/j.mejo.2005.09.028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Generally, short-circuit protections for IGBT are provided by the assistance of analogical discrete devices which can sense and protect. In this paper, we present a new NPT IGBT structure with integrated short-circuit protection. This structure is composed of an anode voltage sensor, a delay MOS transistor, a MOS transistor allowing IGBT turn-off and a Zener diode. The structure optimization depends oil the flexible technological process developed for power structures and based on the functional integration concept [1]. The protection structure optimization is presented and its functionality is verified by 2D simulations with ISE TCAD. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：249 / 256

页数：8

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