Photo-assisted metal-organic chemical vapor deposition of CaCu3Ti4O12 (CCTO) thin films

被引：10
|
作者：
Gupta, N. [1 ]
McMillen, C. [2 ]
机构：
[1] Clemson Univ, Holcombe Dept Elect & Comp Engn, Clemson, SC 29634 USA
[2] Clemson Univ, Dept Chem, Clemson, SC 29634 USA
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2013年 / 16卷 / 05期
关键词：
Photo-assisted MOCVD; Calcium copper titanate; Thin film; Dielectric; DIELECTRIC-PROPERTIES; TECHNOLOGY; CONSTANT;
D O I：
10.1016/j.mssp.2013.03.013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Calcium copper titanate (CaCu3Ti4O12) or CCTO is one of the most researched giant dielectric constant materials in recent years. In the present work, incoherent light source based photo-assisted metal-organic chemical vapor deposition (MOCVD) has been used to prepare CCTO thin films on Si/SiO2 substrates. Key to this unique processing technique is the use of UV radiation as an additional source of energy in conjunction to the thermal energy. The given Photo-assisted MOCVD processing resulted in polycrystalline CCTO growth on a SiO2 surface. Powder X-ray diffraction and scanning electron microscopy were performed to analyze structural and compositional properties of the CCTO thin film. Ellipsometric measurements indicated a refractive index of 3.03 for the CCTO thin film. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1297 / 1302
页数：6
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