Influence of Crystalline Constituent on Resistive Switching Properties of TiO2 Memory Films

被引：28
|
作者：
Chang, Wen-Yuan [1 ]
Ho, Yi-Tang [1 ]
Hsu, Tzu-Cheng [1 ]
Chen, Frederick [2 ]
Tsai, Ming-Jinn [2 ]
Wu, Tai-Bor [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci Engn, Hsinchu 300, Taiwan
[2] Ind Technol Res Inst, Elect & Optoelect Res Lab, Hsinchu 310, Taiwan
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 04期
关键词：
capacitor switching; capacitors; gas mixtures; leakage currents; random-access storage; semiconductor thin films; sputter deposition; titanium compounds; NIO FILMS; RESISTANCE;
D O I：
10.1149/1.3074332
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
TiO2 films were prepared on Pt/Ti/SiO2/Si substrates by radio-frequency reactive sputtering with a different gas mixture. Different constituents of crystalline phases of TiO2 were found by changing the oxygen content in a gas mixture. The influence of crystalline constituent on electrical and resistive switching properties of TiO2 was investigated. The Pt/TiO2/Pt capacitors show reversible and steady bistable resistance switching behavior. The leakage current in the high-resistance state is sensitive to the crystal phase composition of the TiO2 matrix; however, the current flowed through the films in the low-resistance state is hardly affected. Moreover, superior retention characteristics demonstrate the potential for nonvolatile memory applications.
引用
收藏
页码：H135 / H137
页数：3
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