Effects of copper and indium ratio on the performance of the CuInSe2 solar cells

被引：0

作者：

Lee, Ming-Chun ^{[1
]}

Yang, Jui-Fu ^{[2
]}

Hsieh, Ming-Yang ^{[1
]}

Kuo, Shou-Yi ^{[1
]}

机构：

[1] Chang Gung Univ, Grad Inst Electroopt Engn, Kwei Shan 333, Taiwan

[2] Yuan Ze Univ, Dept Photon Engn, Chungli 320, Taiwan

来源：

2014 INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE) | 2014年

关键词：

Copper Indium Diselenide (CuInSe2); Evaporation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Copper Indium Diselenide (CuInSe2) thin films of different Cu-In layers were prepared using sequential elemental evaporation technique. Respectively, the selenization within a close spaced graphite box resulting in quality CuInSe2 (CIS) films was developed. The comparative analysis of crystalline properties evaluated by energy-dispersive X-ray spectroscopy (EDX), scanning electron microscope (SEM), X-ray diffraction (XRD), Raman scattering measurements is presented here. A photovoltaic efficiency of the heterojunction is compared with that the structure of SLG/Mo/CuInSe2/CdS/ZnO/AZO/Al photovoltaic devices. Introducing In-excess CIS film increase the efficiency to 4.62%, because of the current density and open circuit voltage were improved.

引用

页数：2

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