On-wafer load pull characterization of W-Band InPHEMT unit cells for CPW MMIC medium power amplifiers

被引：0

作者：

Baker, DW ^{[1
]}

Robertson, RS ^{[1
]}

Kihm, RT ^{[1
]}

Matloubian, M ^{[1
]}

Yu, M ^{[1
]}

Bowen, R ^{[1
]}

机构：

[1] Raytheon Syst Co, Sensors & Elect Syst, El Segundo, CA 90245 USA

来源：

1999 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4 | 1999年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A W-Band on-wafer, vector source and load pull system has been implemented and applied to the systematic determination of the optimum, large signal, input and output impedances of indium phosphide (InP) HEMT cells as a function of bias and high power RF drive. The lar ge signal optimization of a variety of device styles and sizes, so as to achieve a' priori' W-band power and gain goals, resulted in an optimal HEMT cell geometry and first pass design success of W-band, finite ground coplanar waveguide (FGCPW) medium power amplifiers. These state-of-the-art amplifiers employing single 150 mu m and 250 mu m device cells deliver output powers of 13.8 dBm and 16.7 dBm with efficiencies of 23% and 17.5%, respectively.

引用

页码：1743 / 1746

页数：4