Design of X-band 40 W Pulse-Driven GaN HEMT Power Amplifier

被引：0
|
作者：
Jeong, Hae-Chang [1 ]
Oh, Hyun-Seok [1 ]
Ahmed, Abdul-Rahman [1 ]
Yeom, Kyung-Whan [1 ]
机构：
[1] Chungnam Natl Univ, Dept Radio Sci & Engn, Taejon 305764, South Korea
来源：
2012 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC 2012) | 2012年
关键词：
GaN HEMT; Power Amplifier Module; Load-pull Measurement; Pre-Match; Fixture De-Embedding;
D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
In this paper, a design of X-band (9 similar to 10 GHz) 40 W Pulse-Driven GaN HEMT power amplifier is presented. The selected active device is a commercially available GaN HEMT chip from TriQuint. The optimum input and output impedances of the GaN HEMT are extracted from load-pull measurement using automated tuner system from Maury Inc. and load-pull simulation using nonlinear model from TriQuint. The combined impedance transformer type matching circuit of the power amplifier is designed using EM co-simulation. The fabricated power amplifier which is 15x17.8 mm(2) shows an efficiency of above 32%, power gain of 8.7 similar to 6.7 dB and output power of 46.7 similar to 44.7 dBm at 9 similar to 10 GHz with pulse width of 10 mu sec and duty of 10 %.
引用
收藏
页码：466 / 468
页数：3
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