Buffer layer selection for CuIn1-xGaxSe2 based thin film solar cells

In this work, device modeling and simulation studies have been carried out with a variety of buffer layers over CIGS absorption layer. The band diagram, electric field variation and I/V curves are analyzed and device performance parameters i.e. efficiency, open circuit voltage, short circuit current, quantum efficiency are calculated. The efficiency of CIGS solar cell with ZnSe buffer layer is found comparable with that of CdS layer. The highest short circuit current is found for solar cell with ZnSe buffer layer, whereas the ZnS/CIGS heterojunction provides the highest quantum efficiency in the structures considered. The device physics is discussed and the effect of thickness of buffer layers and absorption layer is studied in order to find a more efficient and stable solar cell.