Identification of Id2 as a globin regulatory protein by representational difference analysis of K562 cells induced to express γ-globin with a fungal compound

被引:0
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作者
Holmes, ML
Haley, JD
Cerruti, L
Zhou, WL
Zogos, H
Smith, DE
Cunningham, JM
Jane, SM
机构
[1] Royal Melbourne Hosp, Bone Marrow Res Lab, Parkville, Vic 3050, Australia
[2] Oncogene Sci Inc, Uniondale, NY USA
[3] St Jude Childrens Res Hosp, Memphis, TN 38105 USA
基金
英国惠康基金;
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D O I
暂无
中图分类号
Q5 [生物化学]; Q7 [分子生物学];
学科分类号
071010 ; 081704 ;
摘要
A fungus-derived compound (OSI-2040) which induces fetal globin expression in the absence of erythroid cell differentiation was identified in a high-throughput drug discovery program. We utilized this compound to isolate gamma-globin regulatory genes that are differentially expressed in OSI-2040-induced and uninduced cells in the human erythroleukemia cell line K562. Representational difference analysis (RDA) of cDNA revealed several genes that were significantly up- or down-regulated in OSI-2040-induced cells. One gene whose expression was markedly enhanced was the gene for the helix-loop-helix (HLH) transcription factor Id2. Southern analysis of RDA amplicons demonstrated progressive enrichment of Id2 with each successive subtraction of uninduced cDNA from induced cDNA. Northern analysis of OSI-2040-induced K562 cells confirmed that Id2 expression was directly up-regulated coordinately with gamma-globin. Analysis of other inducers of fetal globin demonstrated up-regulation of Id2 with sodium butyrate but not with hemin. Retrovirus-mediated overexpression of Id2 in K562 cells reproduced the enhancement of endogenous globin expression observed with OSI-2040 induction. Functional assays demonstrated that an E-box element in hypersensitivity site 2 is required for Id2-dependent enhancement of gamma-promoter activity. Protein binding studies suggest that alterations in E-box site occupancy by basic HLH proteins may influence this activity, thus expanding the potential role of these factors in globin gene regulation.
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页码:4182 / 4190
页数:9
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