Artificial Nociceptor Using 2D MoS2 Threshold Switching Memristor

被引:55
|
作者
Dev, Durjoy [1 ]
Shawkat, Mashiyat S. [1 ]
Krishnaprasad, Adithi [1 ]
Jung, Yeonwoong [1 ,2 ]
Roy, Tania [1 ,2 ]
机构
[1] Univ Cent Florida, Dept Elect & Comp Engn, NanoSci Technol Ctr, Orlando, FL 32826 USA
[2] Univ Cent Florida, Dept Mat Sci & Engn, Orlando, FL 32816 USA
关键词
Two dimensional displays; Biology; Humanoid robots; Molybdenum; Sulfur; Threshold voltage; Robot sensing systems; 2D material; humanoid robot; MoS2; nociceptor;
D O I
10.1109/LED.2020.3012831
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An artificial nociceptor realized with a single 2D MoS2-based memristor device is demonstrated in this work. The threshold switching memristor (TSM) device exhibits volatile resistance switching characteristics with low threshold voltage and a high ON-OFF ratio of 10(6). The Au/MoS2/Ag TSM device imitates a nociceptor, a special receptor of a sensory neuron that can detect noxious stimulus and transfer the signal to the central nervous system for preventive actions. The single device exhibits all key features of nociceptors including threshold, relaxation, "no adaptation" and sensitization phenomena of allodynia and hyperalgesia depending on the strength, duration, and repetition of the external stimuli. This work indicates applicability of this device in artificial sensory alarm systems for humanoid robots.
引用
收藏
页码:1440 / 1443
页数:4
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