Optical and transport properties of undoped and Al-, Ga- and In-doped ZnO thin films

被引：0

作者：

Hsu, LS ^{[1
]}

Yeh, CS

Kuo, CC

Huang, BR

Dhar, S

机构：

[1] Univ Guam, Div Phys Sci, Mangilao, GU 96923 USA

[2] Natl Yunlin Univ Sci & Technol, Grad Sch Engn Sci & Technol, Touliu, Taiwan

[3] Natl Changhua Univ Educ, Dept Ind Educ & Technol, Changhua, Taiwan

[4] Natl Yunlin Univ Sci & Technol, Dept Elect Engn, Touliu, Taiwan

[5] Univ Calcutta, Dept Elect Sci, Kolkata 700009, W Bengal, India

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2005年 / 7卷 / 06期

关键词：

ZnO films; doping by Al; Ga; In; pulsed laser deposition;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pulsed-laser deposition of undoped and Al-, Ga- and In-doped ZnO thin films is reported. The structure of the films remained unaffected by doping. The effect of doping on the optical and transport properties of the films was investigated. The band gaps, the optical constants, and the electron concentrations of the ZnO films are obtained from the ellipsometry and spectrophotometry data. Blue shift of the band gap due to doping is observed. The Burstein-Moss effect is remarked in the Ga- and In-doped ZnO films. The transport data show the increase of conductivity and mobility by doping with Al, Ga, or In. A number of deep levels with energies ranging from 0.75 to 1.14 eV are found in the ZnO films by photoconductivity measurement.

引用

页码：3039 / 3046

页数：8

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