Dual Low-Voltage IC Design for High-Voltage Floating Gate Drives

被引:7
|
作者
Yin, Yan [1 ]
Zane, Regan [2 ]
机构
[1] Natl Semicond Corp, Longmont, CO 80501 USA
[2] Univ Colorado, Dept Elect & Comp Engn, Colorado Power Elect Ctr, Boulder, CO 80309 USA
基金
美国国家科学基金会;
关键词
Capacitive coupling; charge pump; electronic ballast; floating; gate drive; high voltage; integrated circuit (IC);
D O I
10.1109/TCSI.2008.917995
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An integrated circuit (IC) design for low and high side gate drive in high-voltage applications is presented based on use of two identical low-voltage ICs that provide a low cost alternative to existing high-voltage IC floating gate drivers. The approach uses a single external coupling capacitor between the two ICs with on-chip circuitry to provide charge pump power supply and on/off signaling. Design details are given for each of the core blocks of a custom IC prototype fabricated in a 20-V 0.8-mu m CMOS process. Experimental results are presented demonstrating successful drive of a 200-V half-bridge with an electronic ballast and 32-W linear fluorescent lamp load.
引用
收藏
页码:1751 / 1758
页数:8
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