A new type of superlattice: Semiconductor-atomic-superlattice

A new type of superlattice, replacing the heterojunction formed by adjacent semiconductors with semiconductor layers separated by adsorbed species such as oxygen atoms; and CO, molecules; shows promising results. This new type of superlattice, SAS, semiconductor-atomic-superlattice, may be formed epitaxially, enriching the present class of heterojunction superlattices and quantum wells for quantum devices. The Si growth beyond the adsorbed monolayer of oxygens epitaxial having fairly low defect density, below 10(9) / cm(2), consisting of stacking faults and dislocations. At present, such a structure shows stable electroluminescence and insulating behavior, useful for optoelectronic and SOI applications. Molecular species such as CO forms SMS, semiconductor-molecular-superlattice, which also shows luminescence in the visible. SAS may form the basis of future all silicon ICs with both photons and electrons.