SIMPLE THEORETICAL ANALYSIS OF THE PHOTOEMISSION FROM QUANTUM CONFINED SEMICONDUCTORS

被引：0

作者：

De, D. ^{[1
]}

Bhattacharya, S. ^{[2
]}

Ghatak, K. P. ^{[2
]}

机构：

[1] West Bengal Univ Technol, Dept Comp Sci & Engn, BF 142,Sector 1, Kolkata 700064, W Bengal, India

[2] Univ Calcutta, Dept Elect Sci, Kolkata 700009, W Bengal, India

来源：

PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES | 2007年

关键词：

D O I：

10.1142/9789812770950_0026

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

We study theoretically the photoemission from quantum wells (QWs), quantum well wires (QWWs) and quantum dots (QDs) on the basis of a newly formulated electron dispersion law considering the anisotropies of the effective electron masses, the spin-orbit splitting constants and the presence of the crystal field splitting within the framework of kp formalism. It has been found taking quantum confined CdGeAs2 and Hg1-xCdxTe as examples that the photoemission exhibits quantized variations with incident photon energy. The photoemission is the greatest for QDs and the least for QWs. The simplified results for wide gap nondegenerate materials can be obtained as a special case of our generalized analysis which is a compatibility test of our paper.

引用

页码：121 / +

页数：2

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