Droop improvement in blue InGaN light emitting diodes with AlGaN/InGaN superlattice barriers

被引：0
|
作者：
Tong, Jinhui [1 ]
Li, Shuti [1 ]
机构：
[1] S China Normal Univ, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R China
来源：
2012 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP) | 2012年
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We study the characters of blue InGaN light emitting diodes with AlGaN/InGaN superlattice barriers. The efficiency droop can be markly improved when the AlGaN/InGaN superlattice barriers are used.
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页数：3
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