Zn-vacancy induced violet emission in p-type phosphorus and nitrogen codoped ZnO thin films grown by pulsed laser deposition

被引：35

作者：

Mannam, Ramanjaneyulu ^{[1
,2
]}

Eswaran, Senthil Kumar ^{[3
]}

DasGupta, Nandita ^{[4
]}

Rao, M. S. Ramachandra ^{[1
,2
]}

机构：

[1] Indian Inst Technol Madras, Dept Phys, Madras 600036, Tamil Nadu, India

[2] Indian Inst Technol, Nano Funct Mat Technol Ctr, Madras 600036, Tamil Nadu, India

[3] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

[4] Indian Inst Technol, Dept Elect Engn, Microelect & MEMS Lab, Madras 600036, Tamil Nadu, India

来源：

APPLIED SURFACE SCIENCE | 2015年 / 347卷

关键词：

p-type ZnO thin film; PLD; XPS; Photoluminescence; Hall effect; Heterojunction; N-DOPED ZNO; PHOTOLUMINESCENCE; FABRICATION; CONDUCTION;

D O I：

10.1016/j.apsusc.2015.04.057

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on the growth of violet emitting p-type ZnO thin films, with phosphorous (P) and nitrogen (N) codoping, using pulsed laser deposition. XPS studies show that the phosphorous is substituted at Zn site, whereas nitrogen is substituted at oxygen site. Hall measurements confirmed the p-type nature in codoped ZnO thin films. I-V characteristics of the heterojunction formed by n-Si and P, N: ZnO showed rectifying nature. Strong violet emission in PL spectra is attributed to the formation of zinc vacancies. We propose a defect complex, (P-Zn-V-Zn-4N(o)), which acts as an effective acceptor in the P and N codoped ZnO. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：96 / 100

页数：5

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