Growth of III-N materials and devices by metalorganic chemical vapor deposition

被引：1

作者：

Dupuis, RD ^{[1
]}

Grudowski, PA

Eiting, CJ

Park, J

机构：

[1] Univ Texas, Microelect Res Ctr PRC MER 1606DR9900, Austin, TX 78712 USA

[2] USAF, Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA

来源：

SEMICONDUCTORS | 1999年 / 33卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1134/1.1187813

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The characteristics of III-V nitride semiconductor epitaxial layers grown by metalorganic chemical vapor deposition are of interest for the realization of many technologically important devices. This paper will review heteroepitaxial growth on (0001) sapphire substrates as well as the selective-area and subsequent lateral epitaxial overgrowth on masked substrate surfaces. (C) 1999 American Institute of Physics. [S1063-7826(99)00809-1].

引用

页码：965 / 969

页数：5

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