Degradation and breakdown of 0.9 nm EOT SiO2/ALD HfO2/metal gate stacks under positive constant voltage stress

被引：0

作者：

Degraeve, R ^{[1
]}

Kauerauf, T ^{[1
]}

Cho, M ^{[1
]}

Zahid, M ^{[1
]}

Ragnarsson, LÅ ^{[1
]}

Brunco, DP ^{[1
]}

Kaczer, B ^{[1
]}

Roussel, P ^{[1
]}

De Gendt, S ^{[1
]}

Groeseneken, G ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST | 2005年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

By means of leakage current measurements, charge pumping and TDDB analysis, we construct a consistent model for the degradation and breakdown of 0.9 nm EOT Atomic Layer Deposited (ALD) HfO2. During degradation, traps and two-trap clusters are formed in the HfO2 giving rise to considerable SILC. The two-trap clusters subsequently wear out, finally leading to an abrupt hard breakdown. We demonstrate that 0.9 nm EOT ALD HfO2 is intrinsically reliable under Constant Voltage Stress if hard breakdown is used as a failure criterion.

引用

页码：419 / 422

页数：4

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