Investigation of thermoelectric power in indium sesquitelluride(In2Te3) thin films

被引：16

作者：

Lakshminarayana, D ^{[1
]}

Patel, PB

Desai, RR

Panchal, CJ

机构：

[1] Sardar Patel Univ, Dept Elect, Vallabh Vidyanagar 388120, Gujarat, India

[2] Sardar Patel Univ, Dept Chem, Vallabh Vidyanagar 388120, Gujarat, India

[3] Maharaja Sayajirao Univ Baroda, Fac Engn & Technol, Dept Appl Phys, Vadodara 390001, Gujarat, India

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2002年 / 13卷 / 01期

关键词：

D O I：

10.1023/A:1013142929482

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polycrystalline and stoichiometric thin films of indium sesquitelluride (In2Te3) belonging to the alpha -phase were prepared on glass substrates by flash evaporation technique at a constant temperature of 473 K. The thermoelectric power of these p-type alpha -In2Te3 thin films was determined as a function of temperature of the hot end of the films and also of film thickness. It was found that the thermoelectric power is nearly independent of temperature and a possible reason for this behavior has been given. The dependence of the thermoelectric power on the reciprocal thickness of the films has also been discussed on the basis of the size effect theories. (C) 2001 Kluwer Academic Publishers.

引用

页码：27 / 30

页数：4

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