Study on the Issue of Electric Field Concentration in Submodule of Press Pack IGBTs

被引：0
|
作者：
Li, Jinyuan [1 ]
Sun, Junda [2 ]
Zhao, Zhibin [2 ]
Zhang, Peng [1 ]
Guo, Nanwei [2 ]
机构：
[1] State Grid Global Energy Interconnect Res Inst, Beijing 102211, Peoples R China
[2] North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China
来源：
2017 IEEE SIXTH ASIA-PACIFIC CONFERENCE ON ANTENNAS AND PROPAGATION (APCAP) | 2017年
基金：
国家重点研发计划;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
There is a phenomenon that the chips of press pack IGBT (Insulated Gate Bipolar Transistor) meet the requirements of withstand voltage test, but ignition sometimes occurred in the submodules of the same kind of press pack IGBT during the test. In response to this situation, this paper firstly analyzed that the difference of submodule frame lead to different level of electric field concentration. In this paper, quantitative conclusions have been drawn by modeling and simulation of the actual situation in COMSOL Multiphysics the multiphysics finite element simulation software.
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页数：3
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