Simulation of noncrystalline silicon nanoparticles: A computer experiment

被引:15
|
作者
Galashev, AE
Polukhin, VA
Izmodenov, IA
Rakhmanova, OR
机构
[1] Russian Acad Sci, Inst Theoret Phys, Inst Thermal Phys, Ural Div, Ekaterinburg 620219, Russia
[2] Russian Acad Sci, Ural Div, Inst Met, Ekaterinburg 620219, Russia
[3] Russian Acad Sci, Ural Div, Inst Ind Ecol, Ekaterinburg 620219, Russia
基金
俄罗斯基础研究基金会;
关键词
D O I
10.1134/S1087659606010135
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The physical properties of vitreous and amorphous silicon nanoparticles containing 300, 400, and 500 atoms are investigated by the molecular dynamics method. For a limited number of degrees of freedom, the internal energy of the amorphous phase is often less than the internal energy of the vitreous phase. The structure of the central region of silicon nanoparticles is studied in detail by constructing Voronoi polyhedra, which make it possible to determine the mean length of bonds and their number. The differences between the structures of nanoparticles in the amorphous and vitreous states are determined by the differences in the distribution of angles between Si-Si bonds and the distribution of bond lengths. Local arrangements of atoms in vitreous silicon nanoparticles are characterized by larger variations in the interatomic distances. The self-diffusion coefficients determined from mean-square atomic displacements are smaller for amorphous nanoparticles due to dominant diffusion over dangling Si-Si bonds.
引用
收藏
页码:99 / 105
页数:7
相关论文
共 50 条
  • [21] A COMPUTER-SIMULATION OF A SOCIOLOGICAL EXPERIMENT
    SCHWEINGRUBER, D
    SOCIAL SCIENCE COMPUTER REVIEW, 1995, 13 (03) : 351 - 359
  • [22] COMPUTER-SIMULATION OF A REACTOR EXPERIMENT
    ALPEROVICH, MN
    IVANOV, LD
    SOVIET ATOMIC ENERGY, 1990, 69 (04): : 861 - 862
  • [23] Computer simulation of the packing of nanoparticles
    Wang, L.
    Dong, K. J.
    Wang, C. C.
    Zou, R. P.
    Zhou, Z. Y.
    Yu, A. B.
    POWDER TECHNOLOGY, 2022, 401
  • [24] DESIGN THEORY AND EXPERIMENT FOR SILICON COMPUTER DIODES
    CHUNG, TI
    SOLID-STATE ELECTRONICS, 1963, 6 (03) : 271 - &
  • [25] Computer Simulation of Noncrystalline P2O5 , an Ionic–Covalent Oxide
    D. K. Belashchenko
    O. I. Ostrovskii
    Inorganic Materials, 2002, 38 : 48 - 55
  • [26] Counterintuitive cooperative endocytosis of like-charged nanoparticles in cellular internalization: computer simulation and experiment
    Li, Ye
    Yuan, Bing
    Yang, Kai
    Zhang, Xianren
    Yan, Bing
    Cao, Dapeng
    NANOTECHNOLOGY, 2017, 28 (08)
  • [27] COMPUTER MODELING OF NONCRYSTALLINE SIMPLE OXIDES
    BELASHCHENKO, DK
    INORGANIC MATERIALS, 1992, 28 (08) : 1338 - 1346
  • [28] COMPUTER-SIMULATION IN SILICON EPITAXY
    REIF, R
    DUTTON, RW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (04) : 909 - 918
  • [29] Computer simulation of proton channelling in silicon
    Deepak, NK
    Rajasekharan, K
    Neelakandan, K
    PRAMANA-JOURNAL OF PHYSICS, 2000, 54 (06): : 845 - 856
  • [30] Computer simulation of silicon nanoscratch test
    Akabane, Tomoaki
    Sasajima, Yasushi
    Onuki, Jin
    MATERIALS TRANSACTIONS, 2006, 47 (04) : 1090 - 1097