Atomic layer deposition and high-resolution electron microscopy characterization of nickel nanoparticles for catalyst applications

被引:5
|
作者
Dashjav, E. [1 ]
Lipinska-Chwalek, M. [2 ,3 ]
Gruener, D. [4 ]
Mauer, G. [1 ]
Luysberg, M. [3 ,5 ]
Tietz, F. [1 ]
机构
[1] Forschungszentrum Julich, Inst Energy & Climate Res IEK 1, D-52425 Julich, Germany
[2] Forschungszentrum Julich, Ernst Ruska Ctr Microscopy & Spect Electrons, D-52425 Julich, Germany
[3] Rhein Westfal TH Aachen, Cent Facil Electron Microscopy GFE, D-52074 Aachen, Germany
[4] Forschungszentrum Julich, Inst Energy & Climate Res IEK 2, D-52425 Julich, Germany
[5] Forschungszentrum Julich, Peter Grunberg Inst PGI 5, D-52425 Julich, Germany
来源
关键词
All solid ceramic solid oxide fuel cell; Ni nano catalysts; Ceramic anode substrate; Atomic layer deposition of Ni; OXIDE FUEL-CELLS; CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; NIO FILMS; SILICIDE; PRECURSORS; INTERFACE; ANODES; GROWTH; SI;
D O I
10.1016/j.surfcoat.2016.08.074
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Ni nanoparticles (diameter < 10 nm) are deposited on Si and ceramic substrates of porous lanthanum-substituted strontium titanate/yttrium-stabilized zirconia (LST/YSZ) composites by a two-step process. First, NiO films are produced by atomic layer deposition at 200 degrees C using bis(methylcyclopentadienyl)nickel(II) (Ni(MeCp)(2)) and H2O as precursors. In the second step, the NiO films are reduced in H-2 atmosphere at 400-800 degrees C. The size of the resulting Ni nanoparticles is controlled by the temperature. The largest particles with a diameter of about 7 nm are obtained at 800 C. NiO film and Ni nanoparticles deposited on Si substrates are characterized by high-resolution electron microscopy. It was found that the Ni(MeCp)(2) precursor reacts with the substrate, leading to the formation of NiSi2 precipitates beneath the surface of the Si wafer and amorphization of the surrounding area, resulting in a 10 nm thick top layer of the Si wafer. After reductive annealing, NiSi2 precipitates are preserved but Si recrystallizes and the amorphous NiO film transforms into crystalline Ni nanoparticles well distributed on the wafer surface. Process parameters were optimized for Si substrates and transfer of the process to ceramic LST/YSZ substrates is possible in principle. However, a much higher number of ALD cycles (1200 compared to 100 for Si) are necessary to obtain Ni nanoparticles of similar size and the number density of particles is lower than observed for Si substrates. (C) 2016 Elsevier B.V. All rights reserved.
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页码:428 / 435
页数:8
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