Bulk modulus and hardness of chalcopyrite structured solids

被引:32
|
作者
Verma, A. S. [1 ,2 ]
机构
[1] Panjab Univ, Dept Phys, Chandigarh 160014, India
[2] Banasthali Vidyapith, Dept Phys, Banasthali 304022, Rajasthan, India
关键词
Semiconductors; Hardness; Computer modeling and simulation; Mechanical properties; LATTICE-DYNAMICS; VOLUME RELATIONSHIP; EMPIRICAL-MODEL; SEMICONDUCTORS; MICROHARDNESS; CONSTANT; TEMPERATURE; ZINCBLENDE;
D O I
10.1016/j.matchemphys.2013.01.032
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The bulk modulus and microhardness can be represented by an empirical linear relation that is a simple function of melting temperature T-m, atomic volume Omega and product of ionic charges (Z(1)Z(2)Z(3)). Values of bulk modulus B and microhardness H of A(I)B(III)C(2)(VI) and A(II)B(IV)C(2)(V) chalcopyrite semiconductors exhibit a linear relationship when plotted against the k(B)T(m)/Omega (k(B) = Boltzmann's constant), but fall on two straight lines according to the product of ionic charges of the compounds. This correlation is similar in form to other correlations in the literature for diffusion data of materials that indicate the significance of the melting temperature as a scaling or lattice dynamic properties of materials. The calculated results are compared with available experimental data and previous calculations based on phenomenological models. (C) 2013 Elsevier B.V. All rights reserved.
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页码:256 / 261
页数:6
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