Organic thin film transistors for large area electronics

被引：70
|
作者：
Dimitrakopoulos, CD [1 ]
Malenfant, PRL [1 ]
机构：
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源：
ADVANCED MATERIALS | 2002年 / 14卷 / 02期
关键词：
D O I：
10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO;2-9
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Organic thin-film transistors (OTFTs) have lived to see great improvements in recent years. This review presents new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of OTFTs. The shifted focus in research from novel chemical structures to fabrication technologies that optimize morphology and structural order is underscored by chapters on vacuum-deposited and solution-processed organic semiconducting films. Finally, progress in the growing field of the n-type OTFTs is discussed in ample detail. The Figure, showing a pentacene film edge on SiO2, illustrates the morphology issue.
引用
收藏
页码：99 / +
页数：31
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