Fabrication of Cu(In,Ga)Se2 thin films solar cell by selenization process with Se vapor

被引：67
|
作者：
Li, W [1 ]
Sun, Y [1 ]
Liu, W [1 ]
Zhou, L [1 ]
机构：
[1] Nankai Univ, Coll Informat Tech Sci, Inst Optoelect, Tianjin 300071, Peoples R China
来源：
SOLAR ENERGY | 2006年 / 80卷 / 02期
关键词：
selenization; CIGS solar cell; solid Se source;
D O I：
10.1016/j.solener.2005.07.011
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
CIGS films were prepared on Mo-coated glass by sputtering and selenization processes. The metallic precursors were selenized under higher pressure in selenium vapor instead of H2Se. In order to improve the performance of CIGS thin film solar cells, the morphologies of CIGS thin films were studied carefully by various temperature profiles. The relationship between temperature decrease rate and fill factor (FF) of solar cells was investigated thoroughly. On the other hand the value of open circuit voltage (V-oc) was improved by increasing the gallium content near the surface of CIGS thin film. A glass/Mo/CIGS/CdS/ZnO cell was fabricated and the conversion efficiency of 9.4% was obtained without antireflective film. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：191 / 195
页数：5
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