Indium oxide thin-film transistors fabricated by room temperature rf-magnetron sputtering

被引：0
|
作者：
Noh, J. H. [1 ]
Ryu, S. Y. [1 ]
Kim, C. S. [1 ]
Jo, S. J. [1 ]
Hwang, H. S. [1 ]
Baik, H. K. [1 ]
机构：
[1] Yonsei Univ, Seoul 120749, South Korea
来源：
IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have fabricated a bottom-gate In2O3 TFT with high mobility using rf magnetron sputtering at room temperature. Device shows an average field effect mobility of 12.3 cm(2) V(1)s(-1), and sharp on-to-off transition with about 7 orders of magnitude. Adopting our bottom-gate In2O3 TFT, a load-resistance inverter was set up and good dynamic operation has been demonstrated.
引用
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页码：1999 / 2000
页数：2
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