Photoluminescence properties of Co-doped ZnO nanorods array fabricated by the solution method

被引：43
|
作者：
Wang Baiqi [1 ,2 ,3 ]
Shan Xudong [2 ,3 ]
Fu Qiang [2 ,3 ]
Iqbal, Javed [2 ,3 ,4 ]
Yan, Lv [1 ]
Fu Honggang [5 ]
Yu Dapeng [2 ,3 ]
机构：
[1] Tianjin Med Univ, Sch Publ Hlth, Tianjin 300070, Peoples R China
[2] Peking Univ, Sch Phys, Ctr Electron Microscopy, Beijing 100871, Peoples R China
[3] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
[4] Tsinghua Univ, Dept Mat Sci & Engn, Adv Mat Lab, Beijing 100084, Peoples R China
[5] Heilongjiang Univ, Sch Chem & Mat Sci, Phys Chem Lab, Harbin 150080, Peoples R China
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2009年 / 41卷 / 03期
基金：
中国国家自然科学基金;
关键词：
ZnO nanorods array; Co doping; Photoluminescence property; Solution method; OPTICAL-PROPERTIES; NANOWIRE ARRAYS; FIELD-EMISSION; SOLAR-CELLS; TEMPERATURE; GROWTH; PHOTOCATALYSIS; ROUTE; NANOSTRUCTURES; SUBSTRATE;
D O I：
10.1016/j.physe.2008.09.001
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Highly ordered pure and Co-doped ZnO nanorod arrays were synthesized by a solution method at low temperature. The structures and morphology of the samples were studied by XRD, EDS and FESEM as well as Raman, which reveal that the samples are wurtzite structure; the Co atoms successfully substitute Zn atoms positions in nanocrystal. The PL properties of the as-prepared specimens were principally investigated using PL spectroscopy at room temperature and ultralow temperatures. The results strongly disclose that Co-doping can effectively adjust the energy level and abound the contents of surface states in ZnO nanorods, which lead to shift in the emission peak position in ultraviolet (UV) region and enhance the luminescence performance in visible (VL) light region of nanorod arrays. In addition, the slow vibration of phonons in nanocrystal lattice at ultralow temperature can also possibly contribute towards the novel emission performances of Co-doped arrays. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：413 / 417
页数：5
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