A High Power Ku- to Ka-Band Single-Pole-DoubleThrow Switch with Capacitive Loading for Isolation Improvement

被引：0

作者：

Tsao, Yi-Fan ^{[1
]}

Tsao, Chien-Ming ^{[1
]}

Hsu, Heng-Tung ^{[1
]}

Wuerfl, Joachim ^{[2
]}

机构：

[1] Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu, Taiwan

[2] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst FBH, Berline, Germany

来源：

IEEE MTT-S LATIN AMERICA MICROWAVE CONFERENCE (LAMC-2021) | 2021年

关键词：

GaAs pHEMT; SPDT; stacked-FET; isolation; SPDT SWITCH;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report a design of single-poledouble-throw (SPDT) passive high-electron-mobility transistor (HEMT) switch using stacked-FET configuration with capacitive loading for isolation improvement. Based on the analysis subject to the insertion loss and isolation, devices with proper gate peripheries were selected for the realization of the SPDT switch. Implemented in commercial 0.15-mu m GaAs pHEMT technology, the proposed design showed an insertion loss of less than 3 dB with an isolation greater than 30 dB from Ku-band up to Ka-band frequencies. Moreover, the SPDT switch achieved a nice power handling capability of better than 31.5 dBm across 26-40 GHz.

引用

页数：3

共 39 条

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