The suppressed negative bias illumination-induced instability in In-Ga-Zn-O thin film transistors with fringe field structure

被引：9

作者：

Chen, Yu-Chun ^{[1
]}

Chang, Ting-Chang ^{[1
,2
]}

Li, Hung-Wei ^{[3
,4
]}

Hsieh, Tien-Yu ^{[1
]}

Chen, Te-Chih ^{[1
]}

Wu, Chang-Pei ^{[1
]}

Chou, Cheng-Hsu ^{[5
]}

Chung, Wang-Cheng ^{[5
]}

Chang, Jung-Fang ^{[5
]}

Tai, Ya-Hsiang ^{[3
,4
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[3] Natl Chiao Tung Univ, Dept Photon, Hsinchu, Taiwan

[4] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu, Taiwan

[5] Chimei Innolux Corp, Prod Technol Ctr, Tainan, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 22期

关键词：

MEMORY;

D O I：

10.1063/1.4767996

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This study investigates the suppressed negative gate bias illumination stress (NBIS) -induced instability of via-type amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) with fringe field (FF) structures. The less negative threshold voltage shifts of devices after NBIS are showed when device has larger FF structures. This finding is attributed to more dispersive distribution of photo-generated holes in the width direction of a-IGZO during NBIS, which reduce the hole trapping phenomenon in the front channel interface. The a-IGZO TFT with FF structure is expected to be an effective method to increase the electrical reliability of devices after NBIS. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767996]

引用

页数：3

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