Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs

被引：35

作者：

Zhang, Cher Xuan ^{[1
]}

Zhang, En Xia ^{[1
]}

Fleetwood, Daniel M. ^{[1
]}

Schrimpf, Ronald D. ^{[1
]}

Dhar, Sarit ^{[2
]}

Ryu, Sei-Hyung ^{[2
]}

Shen, Xiao ^{[3
]}

Pantelides, Sokrates T. ^{[3
]}

机构：

[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

[2] Cree Inc, Durham, NC 27703 USA

[3] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 01期

基金：

美国国家科学基金会;

关键词：

Interface traps; low-frequency noise; silicon carbide; temperature dependence; 1/F NOISE; MOS; MOBILITY; MODEL;

D O I：

10.1109/LED.2012.2228161

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Detailed studies of the temperature and voltage dependences of the low-frequency noise of 4H-SiC MOSFETs and TCAD simulations show that the noise is caused primarily by interface traps. First-principle calculations identify these traps as carbon vacancy clusters and nitrogen dopant atoms at or near the SiC/SiO2 interface.

引用

页码：117 / 119

页数：3

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