A Cryogenic CMOS Low Dropout Voltage Regulator Design for Space Applications

被引：0

作者：

Kayihan, Halil Ibrahim ^{[1
]}

Kabaoglu, Aykut ^{[1
]}

Yelten, Mustafa Berke ^{[1
]}

机构：

[1] Istanbul Tech Univ, Istanbul, Turkey

来源：

2019 11TH INTERNATIONAL CONFERENCE ON ELECTRICAL AND ELECTRONICS ENGINEERING (ELECO 2019) | 2019年

关键词：

TECHNOLOGY; REFERENCES;

D O I：

10.23919/eleco47770.2019.8990394

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, a low drop-out (LDO) voltage regulator which can operate at cryogenic temperatures is designed using cryogenic transistor models of 0.18 mu m UMC CMOS process. The designed LDO regulator can provide a 100mA load current while generating four different digitally configurable output voltage levels (0.9V, 1.2V, 1.5V, 1.8V). The designed LDO has 92mV, 80mV, 66mV and 77mV drop-out voltages for the output voltage levels 0.9V, 1.2V, 1.5V, and 1.8 V, respectively. Output voltage level varies by similar to 10mV from 77K to room temperature of 300K The post-layout simulation results of the overall LDO are presented.

引用

页码：392 / 396

页数：5

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