Measurement of the absorption cross sections of SiCl4, SiCl3, SiCl2 and Cl at H Lyman-α wavelength

被引:3
|
作者
Mevel, R. [1 ]
Catoire, L. [2 ]
Fikri, M. [3 ]
Roth, P. [3 ]
机构
[1] CALTECH, Grad Aerosp Labs, Pasadena, CA 91125 USA
[2] Ecole Natl Super Tech Avancees ENSTA ParisTech, F-91762 Palaiseau, France
[3] Univ Duisburg Essen, Inst Verbrennung & Gasdynam, D-47048 Duisburg, Germany
关键词
HIGH-TEMPERATURE KINETICS; SHOCK-TUBE; THERMAL-DECOMPOSITION; RATE-CONSTANT; NITROUS-OXIDE; SI; SILANE; ATOMS; PHOTOABSORPTION; COMBUSTION;
D O I
10.1016/j.cplett.2013.01.035
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Atomic resonance absorption spectroscopy coupled with a shock tube is a powerful technique for studying high temperature dynamics of reactive systems. Presently, high temperature pyrolysis of SiCl4-Ar mixtures has been studied behind reflected shock waves. Using time-resolved absorption profiles at 121.6 nm and a detailed reaction model, the absorption cross sections of SiCl4, SiCl3, SiCl2 and Cl have been measured. Results agree well with available data for SiCl4 and constitute, to our knowledge, the first measurements for SiCl3, SiCl2 and Cl at the Lyman-alpha wavelength. These data are relevant to silica particle production from SiCl4-oxidant mixtures combustion synthesis. (C) 2013 Elsevier B. V. All rights reserved.
引用
收藏
页码:31 / 35
页数:5
相关论文
共 50 条
  • [21] Fast growth of polycrystalline film in SiCl4/H2 plasma
    Huang, R
    Lin, XY
    Yu, YP
    Lin, KX
    Wei, JH
    Yu, CY
    Wang, ZK
    CHINESE PHYSICS LETTERS, 2004, 21 (06) : 1168 - 1170
  • [22] Synthesis and Crystal Structure of (SiCl3)2Fe(CO)4
    Tao Xian
    Feng Meng
    Zhang Yi-Ying
    Li Yue-Qin
    Wang Ning
    Shen Ying-Zhong
    CHINESE JOURNAL OF STRUCTURAL CHEMISTRY, 2009, 28 (03) : 287 - 290
  • [23] Analysis of GaN damage induced by Cl2/SiCl4/Ar plasma
    Semiconductor Technology Development Division, Core Device Development Group, R and D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
    不详
    不详
    Jpn. J. Appl. Phys., 8 PART 2
  • [24] Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma
    Minami, Masaki
    Tomiya, Shigetaka
    Ishikawa, Kenji
    Matsumoto, Ryosuke
    Chen, Shang
    Fukasawa, Masanaga
    Uesawa, Fumikatsu
    Sekine, Makoto
    Hori, Masaru
    Tatsumi, Tetsuya
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (08)
  • [25] REACTIVE ION ETCHING OF GAAS, ALGAAS, AND GASB IN CL2 AND SICL4
    PEARTON, SJ
    CHAKRABARTI, UK
    HOBSON, WS
    KINSELLA, AP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04): : 607 - 617
  • [27] The combustion of SiCl4 in hot O2/H2 flames
    Hannebauer, B
    Menzel, F
    ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 2003, 629 (09): : 1485 - 1490
  • [28] UPS study of compounds with metal-silicon bonds: M(CO)(n)SiCl3 (M=Co, Mn; n=4, 5) and Fe(CO)(4)(SiCl3)(2)
    Novak, I
    Huang, W
    Luo, L
    Huang, HH
    Ang, HG
    Zybill, CE
    ORGANOMETALLICS, 1997, 16 (08) : 1567 - 1572
  • [29] THE REACTION OF CIS-RU(CO)4(SICL3)2 WITH BIDENTATE LIGANDS
    POMEROY, RK
    WIJESEKERA, KS
    CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1980, 58 (03): : 206 - 209
  • [30] Perchlorinated silanes Si2Cl6 and Si3Cl8 as sources of SiCl2
    Meyer-Wegner, Frank
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2011, 242